This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STP3N100FI |
|---|---|
| Datasheet | STP3N100FI STP3N100 Datasheet (PDF) |
| File Size | 216.37 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 µ A ID = 1.5 A 3.5 Min. 4 5Ω Ω A Unit V V DS > ID( on) x RD S(on) max V...
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STP3N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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| STP3N62K3 | N-channel Power MOSFET |
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| STP3NB100 | N-CHANNEL PowerMESH MOSFET |
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| STP3NK100Z | N-channel Power MOSFET |
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| STP3NK90Z | N-Channel MOSFET |
