STP3NB100 - N-CHANNEL PowerMESH MOSFET

STMicroelectronics

General Description

cvanced family of power MOSFETs with outstanding uperformances.

STP3NB100 n-channel powermesh mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STP3NB100
Manufacturer	STMicroelectronics
File Size	155.08 KB
Description	N-CHANNEL PowerMESH MOSFET
Datasheet	STP3NB100 Datasheet

Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

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STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID PRELIMINARY DATA STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A s TYPICAL RDS(on) = 5.3Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 1 3 2 1 )DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris- tics.