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STP3NB100FP - N-CHANNEL PowerMESH MOSFET

Download the STP3NB100FP datasheet PDF. This datasheet also covers the STP3NB100 variant, as both devices belong to the same n-channel powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

cvanced family of power MOSFETs with outstanding uperformances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP3NB100-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by STMicroelectronics

Part Number Description
STP3NB100 N-CHANNEL PowerMESH MOSFET
STP3N100 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N100FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N150 N-channel MOSFET
STP3N62K3 N-channel Power MOSFET
STP3N80K5 N-channel Power MOSFET
STP3NK100Z N-channel Power MOSFET
STP3NK50Z N-channel Power MOSFET
STP3NK80Z N-CHANNEL Power MOSFET
STP3NK90Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID PRELIMINARY DATA STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A s TYPICAL RDS(on) = 5.3Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 2 1 3 2 1 )DESCRIPTION t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- cvanced family of power MOSFETs with outstanding uperformances. The new patent pending strip layout rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, Pexceptional avalanche and dv/dt capabilities and teunrivalled gate charge and switching characteris- tics.