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STP3NK100Z - N-channel Power MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application.

Key Features

  • Type STF3NK100Z STP3NK100Z STD3NK100Z.
  • VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. 1 DPAK.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features Type STF3NK100Z STP3NK100Z STD3NK100Z ■ ■ ■ ■ ■ VDSS 1000V 1000V 1000V RDS(on) Max < 6Ω < 6Ω < 6Ω ID 2.5A 2.5A 2.5A PTOT 25W 90W 90W TO-220 1 2 1 3 2 3 TO-220FP Extremely high dv/dt capability 3 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. 1 DPAK Application ■ Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.