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STP3NK90Z - N-Channel MOSFET

General Description

AM01476v1_tab established PowerMESH.

Key Features

  • TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP3NK90Z 900 V 4.8 Ω 3A.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected D(2, TAB).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP3NK90Z Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package Features TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP3NK90Z 900 V 4.8 Ω 3A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected D(2, TAB) Applications • Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.