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STP4N62K3 - SuperMESH3 Power MOSFET

General Description

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

Key Features

  • Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3.
  • VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1. I²PAK 3 12 1 2 TO-220.

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Full PDF Text Transcription for STP4N62K3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP4N62K3. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 ■ ■ ■ ■ ■ ■ VDSS RDS(on) max ID Pw 70 W 25 W 70 W 70 W 1 3 1 2 3 620 V < 1.95 Ω D²PAK 3.8 A TO-220FP 100% avalanche tested 3 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1.