Datasheet4U Logo Datasheet4U.com

STP4NA80FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP4NA80FI datasheet PDF. This datasheet also covers the STP4NA80 variant, as both devices belong to the same n - channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP4NA80_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP4NA60FP N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STMicroelectronics
STP4N150 N-Channel MOSFET STMicroelectronics
STP4N20 N-channel Power MOSFET STMicroelectronics
STP4N40FI N-Channel Enhancement Mode Power MOS Transistor STMicroelectronics
STP4N52K3 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP4NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40F1 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA40FI N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP4NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Published: |