STP5N80K5 Datasheet, STMicroelectronics

Order code STP5N80K5 VDS 800 V RDS(on) max. 1.75 Ω ID 4A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charg.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.