STP65N150M9 Datasheet - STMicroelectronics

N-CHANNEL Power MOSFET

STP65N150M9 Features

* Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A

* Worldwide best FOM RDS(on)

* Qg among silicon-based devices

* Higher VDSS rating

* Higher dv/dt capability

* Excellent switching performance

* Easy to drive

* 100% avalanche test

STP65N150M9 General Description

S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced.

STP65N150M9 Datasheet (228.51 KB)