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STP65N150M9 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STP65N150M9 Datasheet N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2,.

General Description

S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.

The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Key Features

  • Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Zener-protected G(1).

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