900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STP6N25 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

No Preview Available !

www.DataSheet4U.com
TYPE
STP6N25
STP6N25FI
STP6N25
STP6N25FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
VDSS
250 V
250 V
RDS(on)
<1
<1
ID
6A
4A
s TYPICAL RDS(on) = 0.7
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
3
2
1
APPLICATIONS
s HIGH SPEED SWITCHING
TO-220
ISOWATT220
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
INTERNAL SCHEMATIC DIAGRAM
ENVIRONMENT
DataSheet4U.com
s PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1993
DataSheet4U.com
DataSheet4 U .com
Value
STP6N25
STP6N25FI
250
250
± 20
64
4 2.6
24 24
70 35
0.56
0.28
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STP6N25 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

No Preview Available !

www.DataSheet4U.com
STP6N25/FI
et4U.com
THERMAL DATA
Rthj-case
Rthj-amb
Rt h c- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.79
ISOWATT220
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
EAR
IAR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD= 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
6
40
10
4
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0)
ID = 250 µA VGS = 0
VDS = MDaaxtaRSahtienget4U.com
VDS = Max Rating x 0.8 Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
250
Typ.
Max.
Unit
V
250
1000
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3 A
Resistance
VGS = 10V ID = 3 A Tc = 100oC
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
6
Typ.
3
0.7
Max.
4
1
2
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
1.5
Typ.
3.5
Max.
Unit
S
500 700
85 120
15 30
pF
pF
pF
DataShee
2/10
DataSheet4U.com
DataSheet4 U .com


Part Number STP6N25
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Maker ST Microelectronics
Total Page 10 Pages
PDF Download

STP6N25 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STP6N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
ST Microelectronics
2 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy