Datasheet Summary
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 3.9 A
TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s...