STP6N60M2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STP6N60M2 Features

* Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Applications

STP6N60M2 General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.

STP6N60M2 Datasheet (1.04 MB)

STP6N60M2 Datasheet Preview — Preview of STP6N60M2 PDF

Datasheet Details

Part number:

STP6N60M2

Manufacturer:

STMicroelectronics ↗

File Size:

1.04 MB

Description:

N-channel power mosfet.
STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datashee.

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STP6N60M2 N-channel Power MOSFET STMicroelectronics

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STP6N60M2 Features

STP6N60M2 General Description

Datasheet Details

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Description:

STP6N60M2 Distributor