STP6N62K3 Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery
- Zener-protected
- Part: STP6N62K3
- Manufacturer: STMicroelectronics
- Size: 546.55 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STP6N60M2 | N-channel Power MOSFET |
| STP6N65M2 | N-channel Power MOSFET |
| STP6N120K3 | N-channel MOSFET |
| STP6N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6N50FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
STP6N62K3 Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalan.