STP6NM60N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching
- Part: STP6NM60N
- Manufacturer: STMicroelectronics (official site)
- Size: 661.87 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STP6N120K3 | N-channel MOSFET |
| STP6N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6N50FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6N60M2 | N-channel Power MOSFET |
| STP6N62K3 | N-channel Power MOSFET |
STP6NM60N Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) .............................