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STP7NK80ZFP - N-CHANNEL MOSFET

Download the STP7NK80ZFP datasheet PDF. This datasheet also covers the STP7NK80Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP7NK80Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP7NK40Z N-Channel MOSFET STMicroelectronics
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STP7N52K3 N-channel Power MOSFET STMicroelectronics
STP7N60M2 N-channel Power MOSFET STMicroelectronics
STP7N65M2 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP7NK80Z N-CHANNEL MOSFET
STP7NK30Z N-CHANNEL MOSFET
STP7NK40ZFP N-Channel MOSFET
STP7N52DK3 Power MOSFETs
STP7N80Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Applications ■ Switching application Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.