Datasheet Details
| Part number | STPSC10H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 396.57 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC10H065-STMicroelectronics.pdf |
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Overview: STPSC10H065 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode A K K TO-220AC K A K A K TO-220AC insulated K D²PAK A NC DPAK A.
| Part number | STPSC10H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 396.57 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC10H065-STMicroelectronics.pdf |
|
|
|
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Compare STPSC10H065 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
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| STPSC10H065DLF | power Schottky silicon carbide diode |
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| STPSC10H12-Y | Automotive grade 1200V power Schottky silicon carbide diode |
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| STPSC1006D | 600 V power Schottky silicon carbide diode |