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STPSC10H065 Datasheet

power Schottky silicon carbide diode

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STPSC10H065 pdf
STPSC10H065
650 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Datasheet production data
AK
K
A
K
TO-220AC
STPSC10H065D
K
A
NC
D2PAK
STPSC10H065G-TR
K
A
NC
DPAK
STPSC10H065B-TR
Table 1. Device summary
Symbol
IF(AV)
VRRM
Tj (max)
Value
10 A
650 V
175 °C
October 2012
This is information on a product in full production.
Doc ID 023604 Rev 2
1/9
www.st.com
9


STMicroelectronics Electronic Components Datasheet

STPSC10H065 Datasheet

power Schottky silicon carbide diode

No Preview Available !

STPSC10H065 pdf
Characteristics
1 Characteristics
STPSC10H065
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
IFSM
Surge non repetitive forward
current
IFRM Repetitive peak forward current
Tc = 120 °C, = 0.5
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
Tc = 120 °C,Tj = 150 °C, = 0.1
650
22
10
90
80
470
36
Tstg Storage temperature range
Tj Operating junction temperature(1)
1.
d----P-----t--o----t
dTj
R-----t--h-----1--j-------a----
condition to avoid thermal runaway for a diode on its own heatsink
-55 to +175
-40 to +175
Table 3. Thermal resistance (typical values)
V
A
A
A
A
°C
°C
Symbol
Parameter
Value
Typ.
Max.
Unit
Rth(j-c) Junction to case
1.25 1.5 °C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
IR (1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
Tj = 150 °C
-
-
VF (2) Forward voltage drop
Tj = 25 °C
IF = 10 A
Tj = 150 °C
-
-
1. tp = 10 ms, < 2%
2. tp = 500 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.115 x IF2(RMS)
Typ.
9
85
1.56
1.98
Max.
100
425
1.75
2.5
Unit
µA
V
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Qcj(1) Total capacitive charge VR = 400 V,
Cj Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
VR = 400 V, Tc = 25 °C, F = 1 MHz
1.
Most accurate value for the capacitive charge:
Qcj =
VOUT
cj(vR).dvR
0
Typ.
28.5
480
48
Unit
nC
pF
2/9 Doc ID 023604 Rev 2


Part Number STPSC10H065
Description power Schottky silicon carbide diode
Maker STMicroelectronics
Total Page 9 Pages
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