STPSC10H065BY-TR Overview
Key Specifications
Max Operating Temp: 175 °C
Min Operating Temp: -40 °C
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
Key Features
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Recommended to PFC applications
- PPAP capable
