STPSC2H12 Datasheet | STMicroelectronics

STPSC2H12 1200 V power Schottky silicon carbide diode Datasheet - production data A K A K TO-220AC K K A K DPAK HV 2L Features - No or negligible reverse recovery - Switching behavior independent of temperature - Robust high voltage periphery - Operating Tj from -40 °C to 175 °C - Low VF - ECOPACK®2 pliant Description The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Table 1: Device summary Symbol Value IF(AV) VRRM Tj(max.) VF(typ.) 2A 1200 V 175 °C 1.35 V January 2017 DocID030271 Rev 1 This is information on a product in full production....