Part STPSC2H12
Description 1200V power Schottky silicon carbide diode
Category Diode
Manufacturer STMicroelectronics
Size 462.85 KB
STMicroelectronics

STPSC2H12 Overview

Description

The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK®2 compliant