Datasheet Details
| Part number | STPSC2H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 294.43 KB |
| Description | 2A power Schottky silicon carbide diode |
| Download | STPSC2H12-Y Download (PDF) |
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Overview: STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Product label Product status link STPSC2H12-Y Product summary IF(AV) 2A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part number | STPSC2H12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 294.43 KB |
| Description | 2A power Schottky silicon carbide diode |
| Download | STPSC2H12-Y Download (PDF) |
|
|
|
The SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
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