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STPSC2H12-Y - 2A power Schottky silicon carbide diode

Description

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Features

  • AEC-Q101 qualified.
  • PPAP capable.
  • No or negligible reverse recovery.
  • High forward surge capability.
  • Operating Tj from -40 °C to 175 °C.
  • Creepage distance of 3 mm as per IEC 60664-1.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription

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STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Product label Product status link STPSC2H12-Y Product summary IF(AV) 2A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubber diode • Switching diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
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