STPSC2H12-Y datasheet by STMicroelectronics.
| Part number | STPSC2H12-Y |
|---|---|
| Datasheet | STPSC2H12-Y-STMicroelectronics.pdf |
| File Size | 294.43 KB |
| Manufacturer | STMicroelectronics |
| Description | 2A power Schottky silicon carbide diode |
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The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC2H12 | 1200V power Schottky silicon carbide diode |
| STPSC2H065 | power Schottky diode |
| STPSC20065-Y | power Schottky silicon carbide diode |
| STPSC2006CW | 600V power Schottky silicon carbide diode |
| STPSC20G12-Y | 20A power Schottky high surge silicon carbide diode |
| STPSC20H065C | power Schottky silicon carbide diode |
| STPSC20H065C-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
| STPSC20H12 | power Schottky silicon carbide diode |
| STPSC20H12-Y | silicon carbide power Schottky diode |
