Datasheet Details
| Part number | STPSC2H12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 462.85 KB |
| Description | 1200V power Schottky silicon carbide diode |
| Download | STPSC2H12 Download (PDF) |
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| Part number | STPSC2H12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 462.85 KB |
| Description | 1200V power Schottky silicon carbide diode |
| Download | STPSC2H12 Download (PDF) |
|
|
|
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC2H12 1200 V power Schottky silicon carbide diode Datasheet - production data A K A K TO-220AC K K A K DPAK HV.
| Part Number | Description |
|---|---|
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| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
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| STPSC20H12-Y | silicon carbide power Schottky diode |