STPSC2H12
STPSC2H12 is 1200V power Schottky silicon carbide diode manufactured by STMicroelectronics.
1200 V power Schottky silicon carbide diode
- production data
TO-220AC
DPAK HV 2L
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- Low VF
- ECOPACK®2 pliant
Description
The Si C diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary side applications, this ST Si C diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
Table 1: Device summary
Symbol
Value
IF(AV) VRRM Tj(max.) VF(typ.)
2A 1200 V 175 °C 1.35 V
January 2017
Doc ID030271 Rev 1
This is information on a product in full production.
1/10
.st.
Characteristics
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value...
