Datasheet Details
| Part number | STPSC20G12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 487.75 KB |
| Description | 20A power Schottky high surge silicon carbide diode |
| Download | STPSC20G12-Y Download (PDF) |
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| Part number | STPSC20G12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 487.75 KB |
| Description | 20A power Schottky high surge silicon carbide diode |
| Download | STPSC20G12-Y Download (PDF) |
|
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The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC20G12-Y Datasheet Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode A K K A K DO-247 LL Product.
| Part Number | Description |
|---|---|
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