Datasheet Summary
Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode
DO-247 LL
Product label
Features
- AEC-Q101 qualified and PPAP capable
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -55 °C to 175 °C
- Avalanche energy rated
- ECOPACK2 pliant ponent
Applications
- Boost PFC
- HEV/EV OBC (On board battery chargers)
- EV Charging station
Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design...