Datasheet Summary
650 V power Schottky silicon carbide diode
A1 (1) A2 (3)
K (2)
A2 A1 K
TO-220AB STPSC20H065CT
A2 K A1
TO-247 STPSC20H065CW
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior...