Click to expand full text
STPSC20H065C
650 V power Schottky silicon carbide diode
A1 (1) A2 (3)
K (2)
A2 A1 K
TO-220AB STPSC20H065CT
A2 K A1
TO-247 STPSC20H065CW
Features
No or negligible reverse recovery Switching behavior independent of
temperature Dedicated to PFC applications High forward surge capability
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
STPSC20H065C Datasheet
