Datasheet Details
| Part number | STPSC20H065C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 164.82 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20H065C Download (PDF) |
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| Part number | STPSC20H065C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 164.82 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20H065C Download (PDF) |
|
|
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC20H065C 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H065CT A2 K A1 TO-247.
| Part Number | Description |
|---|---|
| STPSC20H065C-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
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| STPSC20H12-Y | silicon carbide power Schottky diode |
| STPSC20H12CWY | power Schottky silicon carbide diode |
| STPSC20065-Y | power Schottky silicon carbide diode |
| STPSC2006CW | 600V power Schottky silicon carbide diode |
| STPSC20G12-Y | 20A power Schottky high surge silicon carbide diode |
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| STPSC2H12 | 1200V power Schottky silicon carbide diode |