| Part number | STPSC20H065C |
|---|---|
| Download | STPSC20H065C Datasheet (PDF) |
| File Size | 164.82 KB |
| Manufacturer | STMicroelectronics |
| Description | power Schottky silicon carbide diode |
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| Part Number | Description |
|---|---|
| STPSC20H065C-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
| STPSC20H12 | power Schottky silicon carbide diode |
| STPSC20H12-Y | silicon carbide power Schottky diode |
| STPSC20H12CWY | power Schottky silicon carbide diode |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
