STMicroelectronics STPSC20H065C-Y
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC20H065C-Y |
|---|---|
| Datasheet | STPSC20H065C-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive 650V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Dedicated to PFC applications
● High forward surge capability
● AEC-Q101 qualified
● ECOPACK®2 compliant component
● PPAP capable Datasheet - production data
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) 2 x 10 A 650 V 175 °C September 2014 This is information on a product in full production. DocID026619 Rev 2 1/9 Characteristics 1 Characteristics STPSC20H065C-Y Table 2.
