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STPSC20H065C-Y
Automotive 650 V power Schottky silicon carbide diode
A1 (1) A2 (3)
K (2)
A2 A1 K
TO-220AB STPSC20H065CTY
A2 K A1
TO-247 STPSC20H065CWY
Features
• No or negligible reverse recovery • Switching behavior independent of
temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
STPSC20H065C-Y Datasheet
