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STPSC20H065CWLY - Automotive 20A 650V power Schottky silicon carbide diode

Description

The STPSC20H065CWLY is an ultra-high-performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • AEC-Q101 qualified.
  • PPAP capable.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Dedicated to PFC.

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Full PDF Text Transcription

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STPSC20H065CWLY Datasheet Automotive 20 A 650 V power Schottky silicon carbide diode A1 K A2 TO-247 LL A2 K A1 Product status link STPSC20H065CWLY Product summary IF(AV) 2 x 10 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.45 V Product label Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • ECOPACK2 compliant component Applications • On board charger (OBC) • Charging stations • PFC applications • UPS • Inverters • Telecom power supplies Description The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is manufactured using a silicon carbide substrate.
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