STMicroelectronics STPSC20065-Y
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC20065-Y |
|---|---|
| Datasheet | STPSC20065-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Dedicated to PFC applications
● High forward surge capability
● ECOPACK®2 compliant component
● PPAP capable
● Operating Tj from -40 °C to 175 °C
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max.) VF (typ.) 20 A 650 V 175 °C 1.30 V November 2017 DocID029260 Rev 2 This is information on a product in full production. 1/14 Characteristics STPSC20065-Y 1 Characteristics...
