Datasheet Details
| Part number | STPSC20065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 613.24 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20065-Y Download (PDF) |
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| Part number | STPSC20065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 613.24 KB |
| Description | power Schottky silicon carbide diode |
| Download | STPSC20065-Y Download (PDF) |
|
|
|
The SiC diode is an ultra high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC20065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data A K K A K TO-220AC A K DO-247.
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