Datasheet Summary
Automotive 650 V power Schottky silicon carbide diode
- production data
TO-220AC
DO-247
D²PAK
Features
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- ECOPACK®2 pliant ponent
- PPAP capable
- Operating Tj from -40 °C to 175 °C
Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is...