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STPSC2006CW

Manufacturer: STMicroelectronics

STPSC2006CW datasheet by STMicroelectronics.

STPSC2006CW datasheet preview

STPSC2006CW Datasheet Details

Part number STPSC2006CW
Datasheet STPSC2006CW-STMicroelectronics.pdf
File Size 75.08 KB
Manufacturer STMicroelectronics
Description 600V power Schottky silicon carbide diode
STPSC2006CW page 2 STPSC2006CW page 3

STPSC2006CW Overview

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

STPSC2006CW Key Features

  • No or negligible reverse recovery
  • Particularly suitable in PFC boost diode
  • 55 to +175 °C
  • 40 to +175 °C
  • 30 210
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STPSC2006CW Distributor

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