STPSC2006CW Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.
STPSC2006CW Key Features
- No or negligible reverse recovery
- Particularly suitable in PFC boost diode
- 55 to +175 °C
- 40 to +175 °C
- 30 210