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STPSC2006CW - 600V power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Particularly suitable in PFC boost diode function.

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STPSC2006CW 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. A1 K A2 A2 K A1 TO-247 STPSC2006CW Table 1.
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