STMicroelectronics STPSC2006CW
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC2006CW |
|---|---|
| Datasheet | STPSC2006CW Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Particularly suitable in PFC boost diode function
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. A1 K A2 A2 K A1 TO-247 STPSC2006CW Table 1. Device summary Symbol IF(AV) VRRM Tj (max) QC (typ) Value 2 x 10 A 600 V 175 °C 12 nC March 2011 Doc ID 018506 Rev 1 1/7 7 Characteristics 1 Characteristics STPSC2006CW Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 18 A IF(AV) Average forward current Tc = 115 °C, δ = 0.5 Per diode Tc = 100 °C,...
