Datasheet Details
| Part number | STPSC2H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 231.96 KB |
| Description | power Schottky diode |
| Download | STPSC2H065 Download (PDF) |
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| Part number | STPSC2H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 231.96 KB |
| Description | power Schottky diode |
| Download | STPSC2H065 Download (PDF) |
|
|
|
The SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC2H065 Datasheet 650 V, 2 A high surge silicon carbide power Schottky diode AK Product label Product status STPSC2H065 Product summary Symbol Value IF(AV) 2A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.
| Part Number | Description |
|---|---|
| STPSC2H12 | 1200V power Schottky silicon carbide diode |
| STPSC2H12-Y | 2A power Schottky silicon carbide diode |
| STPSC20065-Y | power Schottky silicon carbide diode |
| STPSC2006CW | 600V power Schottky silicon carbide diode |
| STPSC20G12-Y | 20A power Schottky high surge silicon carbide diode |
| STPSC20H065C | power Schottky silicon carbide diode |
| STPSC20H065C-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC20H065CWLY | Automotive 20A 650V power Schottky silicon carbide diode |
| STPSC20H12 | power Schottky silicon carbide diode |
| STPSC20H12-Y | silicon carbide power Schottky diode |