STPSC2H065 Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC2H065 Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK2 pliant ponent
- Power efficient product