STMicroelectronics STPSC2H065
the STPSC2H065 SiC diode will boost performance in hard switching conditions.| Part No. | STPSC2H065 |
|---|---|
| Datasheet | STPSC2H065 Download |
| Manufacturer |  STMicroelectronics |
| Description | power Schottky diode |
| Buy | Stock & Price |
FEATURES
● No reverse recovery charge in application current range● Switching behavior independent of temperature
● High forward surge capability
● ECOPACK2 compliant component
● Power efficient product
APPLICATIONS
● Switch mode power supply● PFC
● "DC/DC" converters
● LLC topologies
● Boost diode
DESCRIPTION
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, DS12989 - Rev 1 - April 2019 For further information contact your local STMicroelectronics sales office. STPSC2H065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter V...
