STPSC2H065
STPSC2H065 is power Schottky diode manufactured by STMicroelectronics.
650 V, 2 A high surge silicon carbide power Schottky diode
Product label
Product status STPSC2H065
Product summary
Symbol
Value
IF(AV)
2A
VRRM
650 V
Tj(max.)
175 °C
VF(typ.)
1.38 V
Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK2 pliant ponent
- Power efficient product
Applications
- Switch mode power supply
- PFC
- "DC/DC" converters
- LLC topologies
- Boost diode
Description
The Si C diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065 Si C diode will boost performance in hard switching conditions.
DS12989...
