Datasheet Details
| Part number | STPSC30G12 |
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| Manufacturer | STMicroelectronics |
| File Size | 486.61 KB |
| Description | 30A power Schottky high surge silicon carbide diode |
| Datasheet |
 STPSC30G12 Datasheet
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General Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Key Features
- None or negligible reverse recovery.
- Switching behavior independent of temperature.
- Robust high voltage periphery.
- Operating Tj from -55 °C to 175 °C.
- Avalanche energy rated.
- ECOPACK2 compliant component.