• Part: STPSC30G12-Y
  • Description: 30A power Schottky high surge silicon carbide diode
  • Category: Diode
  • Manufacturer: STMicroelectronics
  • Size: 488.24 KB
Download STPSC30G12-Y Datasheet PDF
STMicroelectronics
STPSC30G12-Y
STPSC30G12-Y is 30A power Schottky high surge silicon carbide diode manufactured by STMicroelectronics.
Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode DO-247 LL Product label Features - AEC-Q101 qualified and PPAP capable - None or negligible reverse recovery - Switching behavior independent of temperature - Robust high voltage periphery - Operating Tj from -55 °C to 175 °C - Avalanche energy rated - ECOPACK2 pliant ponent Applications - Boost PFC - HEV/EV OBC (On board battery chargers) - EV Charging station Description The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design...