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STPSC30G12-Y - 30A power Schottky high surge silicon carbide diode

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Features

  • AEC-Q101 qualified and PPAP capable.
  • None or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating Tj from -55 °C to 175 °C.
  • Avalanche energy rated.
  • ECOPACK2 compliant component.

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STPSC30G12-Y Datasheet Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode A K K A K DO-247 LL Product label Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component Applications • Boost PFC • HEV/EV OBC (On board battery chargers) • EV Charging station Description The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
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