STPSC30G12-Y Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
STPSC30G12-Y Key Features
- AEC-Q101 qualified and PPAP capable
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -55 °C to 175 °C
- Avalanche energy rated
- ECOPACK2 pliant ponent