Datasheet Details
| Part number | STPSC30G12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 486.61 KB |
| Description | 30A power Schottky high surge silicon carbide diode |
| Download | STPSC30G12 Download (PDF) |
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Overview: STPSC30G12 Datasheet 1200 V, 30 A power Schottky high surge silicon carbide diode A K K A K DO-247 LL Product.
| Part number | STPSC30G12 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 486.61 KB |
| Description | 30A power Schottky high surge silicon carbide diode |
| Download | STPSC30G12 Download (PDF) |
|
|
|
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Compare STPSC30G12 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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