Part STPSC40H12C
Description 40A power Schottky silicon carbide diode
Category Diode
Manufacturer STMicroelectronics
Size 436.26 KB
STMicroelectronics

STPSC40H12C Overview

Description

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.

Key Features

  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant component