STPSC40H12C diode equivalent, 40a power schottky silicon carbide diode.
* None or negligible reverse recovery
* Switching behavior independent of temperature
* Robust high voltage periphery
* Operating Tj from -40 °C to 175 °C.
* Solar inverter
* Boost PFC
* Air conditioning equipment
* UPS power supply
* Telecom / Server powe.
The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating..
Image gallery
Download