STPSC40H12C-Y
STPSC40H12C-Y is power Schottky silicon carbide diode manufactured by STMicroelectronics.
40 A 1200 V power Schottky silicon carbide diode
Product status link STPSC40H12C-Y
Product summary
IF(AV)
2 x 20 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
Product label
Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 pliant
Applications
- OBC (On Board Battery chargers)
- PHEV
- EV charging stations
- Resonant LLC topology
- PFC functions (Power Factor Corrector)
Description
The Si C diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST Si C diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
DS13623
- Rev...
