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STPSC40H12C-Y - power Schottky silicon carbide diode

General Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high-voltage periphery.
  • PPAP capable.
  • Operating Tj from -40 °C to 175 °C.
  • ECOPACK2 compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC40H12C-Y Datasheet 40 A 1200 V power Schottky silicon carbide diode Product status link STPSC40H12C-Y Product summary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Product label Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant Applications • OBC (On Board Battery chargers) • PHEV - EV charging stations • Resonant LLC topology • PFC functions (Power Factor Corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.