STMicroelectronics STPSC40H12C-Y
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.| Part No. | STPSC40H12C-Y |
|---|---|
| Datasheet | STPSC40H12C-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | power Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● No or negligible reverse recovery
● Switching behavior independent of temperature
● Robust high-voltage periphery
● PPAP capable
● Operating Tj from -40 °C to 175 °C
● ECOPACK2 compliant
APPLICATIONS
● OBC (On Board Battery chargers)● PHEV - EV charging stations
● Resonant LLC topology
● PFC functions (Power Factor Corrector)
DESCRIPTION
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. DS13623 - Rev 1 - January 2021 For further information contact your local STMicroelectronics sales office.
