Datasheet Details
| Part number | STPSC40H12C-Y |
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| Manufacturer | STMicroelectronics |
| File Size | 251.25 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet |
 STPSC40H12C-Y Datasheet
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| Part number | STPSC40H12C-Y |
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| Manufacturer | STMicroelectronics |
| File Size | 251.25 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet |
STPSC40H12C-Y Datasheet
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The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.