STPSC40H12C-Y Overview
Description
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate.
Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high-voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 compliant
