Datasheet Details
| Part number | STPSC40H12C-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 251.25 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC40H12C-Y-STMicroelectronics.pdf |
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Overview: STPSC40H12C-Y Datasheet 40 A 1200 V power Schottky silicon carbide diode Product status link STPSC40H12C-Y Product summary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part number | STPSC40H12C-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 251.25 KB |
| Description | power Schottky silicon carbide diode |
| Datasheet | STPSC40H12C-Y-STMicroelectronics.pdf |
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|
|
The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
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