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STPSC40H12C

Manufacturer: STMicroelectronics

STPSC40H12C datasheet by STMicroelectronics.

STPSC40H12C datasheet preview

STPSC40H12C Datasheet Details

Part number STPSC40H12C
Datasheet STPSC40H12C-STMicroelectronics.pdf
File Size 436.26 KB
Manufacturer STMicroelectronics
Description 40A power Schottky silicon carbide diode
STPSC40H12C page 2 STPSC40H12C page 3

STPSC40H12C Overview

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

STPSC40H12C Key Features

  • None or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 pliant ponent
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