STPSC40H12C
STPSC40H12C is 40A power Schottky silicon carbide diode manufactured by STMicroelectronics.
1200 V, 40 A power Schottky silicon carbide diode
A1 K
A2
TO-247 LL
A2 K A1
Product label
Product status link STPSC40H12C
Features
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -40 °C to 175 °C
- ECOPACK2 pliant ponent
Applications
- Solar inverter
- Boost PFC
- Air conditioning equipment
- UPS power supply
- Tele / Server power equipment
- HEV/EV OBC (On board battery chargers)
- EV Charging station
Description
The Si C diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST Si C diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
Product summary
IF(AV)
2 x 20 A
VRRM
1200 V
Tj (max.)
175...
