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STPSC40H12C - 40A power Schottky silicon carbide diode

General Description

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Key Features

  • None or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating Tj from -40 °C to 175 °C.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC40H12C Datasheet 1200 V, 40 A power Schottky silicon carbide diode A1 K A2 TO-247 LL A2 K A1 Product label Product status link STPSC40H12C Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant component Applications • Solar inverter • Boost PFC • Air conditioning equipment • UPS power supply • Telecom / Server power equipment • HEV/EV OBC (On board battery chargers) • EV Charging station Description The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.