Datasheet Details
| Part number | STPSC40H12C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 436.26 KB |
| Description | 40A power Schottky silicon carbide diode |
| Datasheet |
 STPSC40H12C Datasheet
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| Part number | STPSC40H12C |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 436.26 KB |
| Description | 40A power Schottky silicon carbide diode |
| Datasheet |
STPSC40H12C Datasheet
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The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.