STPSC6H065 diode equivalent, 650v power schottky silicon carbide diode.
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* High forward surge capability
* Insulated pack.
* Switch mode power supply
* PFC
* DCDC converters
* LLC topologies
* Boost diode
Product status ST.
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky cons.
Image gallery
Download