Datasheet Details
| Part number | STPSC6H065DLF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 377.65 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet |
 STPSC6H065DLF Datasheet
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General Description
This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Key Features
- Less than 1 mm height package.
- High creepage package.
- No or negligible reverse recovery.
- Temperature independent switching behavior.
- High forward surge capability.
- Low drop forward voltage.
- Power efficient product.
- ECOPACK2 compliant component.