Datasheet Details
| Part number | STPSC6H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.27 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet |
 STPSC6H065 Datasheet
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| Part number | STPSC6H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.27 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet |
STPSC6H065 Datasheet
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This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.