STPSC6H065 Overview
Description
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF
- Power efficient product
- ECOPACK®2 compliant component
