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STQ3NK50ZR-AP - N-CHANNEL MOSFET

General Description

The SuperMESH™ series is obtained through an extreme opyimization of ST’s well established strip based PowerMESH™ layout.

In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application.

Key Features

  • TYPE STQ3NK50ZR-AP STD3NK50Z STD3NK50Z-1 s s s s s s Figure 1: Package RDS(on) 3.5 Ω 3.5 Ω 3.5 Ω ID 0.5 A 2.3 A 2.3 A Pw 3W 45 W 40 W VDSS 500 V 500 V 500 V 3 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 3.0Ω - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH™ MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STQ3NK50ZR-AP STD3NK50Z STD3NK50Z-1 s s s s s s Figure 1: Package RDS(on) 3.5 Ω 3.5 Ω 3.5 Ω ID 0.5 A 2.3 A 2.3 A Pw 3W 45 W 40 W VDSS 500 V 500 V 500 V 3 1 TYPICAL RDS(on) = 3.0 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY) 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopak) DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme opyimization of ST’s well established strip based PowerMESH™ layout.