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STRH100N10 - N-Channel Power MOSFET

General Description

The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package.

Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification.

Key Features

  • VDS 100 V ID 48 A.
  • Fast switching.
  • 100% avalanche tested.
  • Hermetic package.
  • 50 krad.
  • SEE radiation hardened RDS(on) typ. 30 mΩ Qg 135 nC.

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Full PDF Text Transcription for STRH100N10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STRH100N10. For precise diagrams, tables, and layout, please refer to the original PDF.

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STRH100N10 Datasheet Rad-Hard 100 V, 48 A N-channel Power MOSFET 1 2 3 TO-254AA D(1) G(3) S(2) SC30150 Product status link STRH100N10 Features VDS 100 V ID 48 A • Fast switching • 100% avalanche tested • Hermetic package • 50 krad • SEE radiation hardened RDS(on) typ. 30 mΩ Qg 135 nC Description The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package. Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.