STRH100N10 Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 50 krad
- SEE radiation hardened
- 50 krad
- Rev 11
- January 2021 For further information contact your local STMicroelectronics sales office
- Part: STRH100N10
- Manufacturer: STMicroelectronics (official site)
- Size: 1.52 MB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STRH10N25ESY3 | Power MOSFET |
| STRH12P10ESY3 | Power MOSFET |
| STRH13N20SY3 | Power MOSFET |
| STRH40N25FSY3 | N-CHANNEL Power MOSFET |
| STRH80P6FSY3 | P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET |
STRH100N10 Description
The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package. Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.