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STS6DNF30V Datasheet

DUAL N - CHANNEL POWER MOSFET

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STS6DNF30V
DUAL N-CHANNEL 30V - 0.026- 6A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS6DNF30V 30 V
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<0.030(@4.5V)
<0.038(@2.5V)
6A
s TYPICAL RDS(on) = 0.026(@4.5V)
s TYPICAL RDS(on) = 0.030(@2.5V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s DC-DC CONVERTERS
s POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
Single Operation
Drain Current (continuos) at TC = 100°C
Single Operation
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
(q) Pulse width limited by safe operating area
July 2002
Value
30
30
±12
6
3.8
24
2
1.6
Unit
V
V
V
A
A
A
W
W
1/8


STMicroelectronics Electronic Components Datasheet

STS6DNF30V Datasheet

DUAL N - CHANNEL POWER MOSFET

No Preview Available !

STS6DNF30V
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max Single Operation
Thermal Resistance Junction-ambient Max Dual Operation
Tj Max. Operating Junction Temperature
Tstg Storage Temperature
78
62.5
150
–65 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
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V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
ID = 250 µA, VGS = 0
Min.
30
Typ.
Max.
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±12V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 4.5 V, ID = 3 A
VGS = 2.5 V, ID = 3 A
Min.
0.6
Typ. Max.
0.026
0.030
0.030
0.038
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
15
800
180
32
Max.
Unit
S
pF
pF
pF
2/8


Part Number STS6DNF30V
Description DUAL N - CHANNEL POWER MOSFET
Maker STMicroelectronics
Total Page 8 Pages
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