STT3P2UH7 Datasheet, STMicroelectronics

Order code STT3P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 3A
* Very low on-resistance
* Very low capacitance and gate charge
* High avalanche ruggedness Ap.

* Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench g.

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Order code STT3P2UH7 Tab.