STT4P3LLH6 Description
G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. STT4P3LLH6 Electrical ratings Electrical ratings Table.
STT4P3LLH6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss