STT4P3LLH6 Datasheet | STMicroelectronics

P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package SOT23-6L Features Order code RDS(on) max. 30 V 56 mΩ at 10 V 4A - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss D (1,2,5,6) Applications - Switching applications Description G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S (4) PG3D1256S4 Product status link STT4P3LLH6 Product summary Order code Marking 4K3L Package SOT23-6L Packing Tape...