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STT4P3LLH6 - P-Channel Power MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID STT4P3LLH6 30 V 56 mΩ at 10 V 4A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss D (1,2,5,6).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT4P3LLH6 Datasheet P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package SOT23-6L Features Order code VDS RDS(on) max. ID STT4P3LLH6 30 V 56 mΩ at 10 V 4A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss D (1,2,5,6) Applications • Switching applications Description G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.