STT3P2UH7 Datasheet | STMicroelectronics

P-channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7 Power MOSFET in a SOT23-6L package - production data SOT23-6L Figure 1: Internal schematic diagram Features Order code STT3P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 3A - Very low on-resistance - Very low capacitance and gate charge - High avalanche ruggedness Applications - Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure bined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Order code STT3P2UH7 Table 1: Device summary Marking Package 3L2U SOT23-6L Packaging...