STT4P3LLH6 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STT4P3LLH6 30 V 56 mΩ at 10 V 4A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.

* Switching applications Description G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 .