Datasheet Summary
High efficiency ultrafast diode
Features
- Very low conduction losses
- Negligible switching losses
- Low forward and reverse recovery times
- High junction temperature
Description
The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
DO-41 STTH2R06
SMA STTH2R06A
SMB STTH2R06U
SMC STTH2R06S
Table 1. Device summary Symbol
IF(AV) VRRM
Tj VF(typ) trr (typ)
Value 2A
600 V 175 °C 1.0 V 35 ns
December 2009
Doc ID 10757 Rev 4
1/10
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