STTH20002TV Datasheet | STMicroelectronics

.. ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (typ) trr (typ) Features AND BENEFITS - - - - - Up to 2 x 120 A 200 V 150°C 0.75 V 41 ns K2 A1 A2 K1 K2 K1 A1 A2 Suited for SMPS Very Low Forward Losses Low recovery time High surge current capability Insulated: Insulating voltage=2500VRMS Capacitance = 55p F ISOTOP STTH20002TV1 DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) IFSM Tstg Tj RMS forward voltage Average forward current δ = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 95°C Per diode Tc = 80°C Per diode tp = 10ms sinusoidal Value 200 170 100 120 1000 -55 to + 150 150 Unit V A A A °C °C Order Codes Part Number STTH20002TV1 Marking STTH20002TV1 July 2004 REV. 2 1/5 THERMAL RESISTANCE Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Maximum 0.52 0.31 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - VF - - Parameter Test conditions VR = VRRM 80 IF = 100A IF = 200A Tj = 150°C IF = 100A IF = 200A Pulse test: - - tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 I F (RMS) - tp = 5 ms, δ <...