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STTH806DTI Datasheet Tandem 600V HYPERFAST BOOST DIODE

Manufacturer: STMicroelectronics

General Description

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series.

TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal δ = 0.15 Tc = 130°C Value 600 14 80 17 -65 +150 + 150 Unit V A A A °C °C October 2003 - Ed: 2A 1/5 STTH806DTI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case thermal resistance Test conditions Value 2.6 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C Tj = 150°C Pulse test : * tp = 100 ms, δ < 2 % ** tp = 380 µs, δ < 2% Min.

Overview

www.DataSheet4U.com ® STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.

Key Features

  • s 8A 600 V 150 °C 2.4 V 4A 13 ns 1 2 2 1 Insulated TO-220AB s s s s s.