STTH806TTI Datasheet | STMicroelectronics

.. ® TURBOSWITCH™ Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 8A 600 V (in series) 150 °C 2.6 V 4A 1 2 3 1 2 3 Insulated TO-220AB Features AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS. DESIGNED FOR HIGH DI/DT OPERATION. ULTRA-FAST RECOVERY CURRENT TO PETE WITH Ga As DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED. INTERNAL CERAMIC INSULATED PACKAGE ALLOWS FLEXIBLE HEATSINKING ON MON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT VOLTAGE BALANCE NETWORK. INSULATED VERSION: : Insulated voltage = 2500 V(RMS) Capacitance = 7 p F DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode posed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high d IF/dt. ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 14 80 -65 +150 + 150 Unit V A A °C °C TM: TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 3A 1/5 THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case thermal resistance Conduction power dissipation for both diodes Parameter Junction to case thermal resistance Test conditions Per diode Coupling Total IF(AV) = 8 A δ = 0.5 Tc = 80°C Value 5 0.2 2.6 27 W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR - Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C Tj = 125°C Pulse test : - tp = 5 ms, δ < 2 % - - tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV)...