STTH806DTI Datasheet | STMicroelectronics

.. ® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) Features AND BENEFITS s 8A 600 V 150 °C 2.4 V 4A 13 ns 2 1 Insulated TO-220AB s s s s s ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO PETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON MON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=7p F DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode posed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high d IF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal δ = 0.15 Tc = 130°C Value 600 14 80 17 -65 +150 + 150 Unit V A A A °C °C October 2003 - Ed: 2A 1/5 THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case thermal resistance Test conditions Value 2.6 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR - Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C Tj = 150°C Pulse test : - tp = 100 ms, δ < 2 % - - tp = 380 µs, δ < 2% Min. Typ. Max. 10 Unit µA 100 3.6 V - - To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.087 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery...