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STTH802 - Ultrafast recovery diode

General Description

The STTH802 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Key Features

  • K TO-220AC STTH802D Very low conduction losses Negligible switching losses Low forward and reverse recovery time High junction temperature K A NC DPAK STTH802B K A NC D2PAK STTH802G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STTH802 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 8A 200 V 175° C 0.8 V 17 ns A K K A A K TO-220FPAC STTH802FP Features and benefits ■ ■ ■ ■ K TO-220AC STTH802D Very low conduction losses Negligible switching losses Low forward and reverse recovery time High junction temperature K A NC DPAK STTH802B K A NC D2PAK STTH802G Description The STTH802 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, and D2PAK this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.