STU10NC70Z Datasheet | STMicroelectronics

w w a D . w S a t e e h U 4 t m o .c STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH™ III MOSFET VDSS 700 V 700 V RDS(on) <0.75Ω <0.75Ω ID 9.4 A 9.4 A TYPE STU10NC70Z STU10NC70ZI s s s s s s TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED Max220 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness...